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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11770111 B1

PDFFull Text
Date of Patent:
Sep. 26, 2023

Filed:

Mar. 16, 2018

Elastic wave device

Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Yutaka Kishimoto, Nagaokakyo, JP;

Tetsuya Kimura, Nagaokakyo, JP;

Masashi Omura, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Kyoto, JP;

Attorney:

KEATING & BENNETT, LLP

Primary Examiner:

Derek J Rosenau

Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H10N 30/853 (2023.01); H03H 9/05 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02897 (2013.01); H03H 3/02 (2013.01); H03H 9/02133 (2013.01); H03H 9/02228 (2013.01); H03H 9/02559 (2013.01); H03H 9/0585 (2013.01); H03H 9/14538 (2013.01); H03H 9/175 (2013.01); H10N 30/8536 (2023.02); H10N 30/8542 (2023.02); H10N 30/877 (2023.02); H10N 30/883 (2023.02); H03H 9/6406 (2013.01); H03H 2003/025 (2013.01);
Abstract

An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. An absolute value of a thermal expansion coefficient of the piezoelectric substrate is larger than an absolute value of a thermal expansion coefficient of the supporting substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the first acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the third acoustic impedance layer and the fourth acoustic impedance layer.

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