The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Feb. 08, 2022
Applicant:

The Boeing Company, Chicago, IL (US);

Inventors:

Shanying Cui, Calabasas, CA (US);

Danny Kim, Agoura Hills, CA (US);

Assignee:

THE BOEING COMPANY, Arlington, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract

A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AIN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.


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