The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Feb. 02, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Yuhki Fujino, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a first insulating film provided in a trench reaching a second semiconductor layer from above the second semiconductor region; a second electrode provided in the trench, the second electrode facing the second semiconductor layer via the first insulating film; the second insulating film being provided between the side surface of the second electrode and a fifth insulating film provided between a side surface of the second electrode and the second semiconductor layer, the second insulating film containing a second insulating material having a higher dielectric constant than the first insulating material; a third electrode provided above the second electrode, the first insulating film and the second insulating film, the third electrode facing the first semiconductor region; an interlayer insulating film provided on the third electrode; and a fourth electrode provided above the interlayer insulating film.