The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Sep. 01, 2021
Applicants:

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Shunsuke Asaba, Himeji Hyogo, JP;

Hiroshi Kono, Himeji Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 27/088 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device of embodiments includes a first gate electrode, a second gate electrode, a third gate electrode extending in a first direction, and a gate wiring line extending in a second direction crossing the first direction and to which the first to the third gate electrodes are connected. Assuming distance between the first and the second gate electrode in the second direction in a first region is S1, distance between the first and the second gate electrode in the second direction in a second region closer to the gate wiring line than the first region is S2, distance between the second and the third gate electrode in the second direction in the first region is S3, and distance between the second and the third gate electrode in the second direction in the second region is S4, following Expressions are satisfied,1<3,1<2,3>4.


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