The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Jun. 11, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Dong Hun Lee, Icheon-si, KR;

Jeong Hwan Kim, Icheon-si, KR;

Mi Seong Park, Icheon-si, KR;

Jung Shik Jang, Icheon-si, KR;

Won Geun Choi, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/76838 (2013.01);
Abstract

A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.


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