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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11769540 B1

PDFFull Text
Date of Patent:
Sep. 26, 2023

Filed:

Feb. 24, 2022

Giant spin hall-based compact neuromorphic cell optimized for differential read inference

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Titash Rakshit, Austin, TX (US);

Ryan Hatcher, Austin, TX (US);

Jorge A. Kittl, Austin, TX (US);

Assignee:

Samsung Electronics Co., Ltd., Yongin-si, KR;

Attorney:

Lewis Roca Rothgerber Christie LLP

Primary Examiner:

Anthan Tran

Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06N 3/063 (2023.01); G06F 7/50 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G06F 7/50 (2013.01); G06N 3/063 (2013.01); G11C 11/1673 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02); G06F 2207/4824 (2013.01);
Abstract

A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Find Patent Forward Citations

Rakshit, Titash. (2023). Giant spin hall-based compact neuromorphic cell optimized for differential read inference (U.S. Patent No. 11769540). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11769540

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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