The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

May. 12, 2022
Applicant:

Google Llc, Mountain View, CA (US);

Inventors:

Emre Tuncer, Santa Cruz, CA (US);

Kaushik Balamukundhan, San Jose, CA (US);

Yiran Li, Cupertino, CA (US);

Assignee:

Google LLC, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/30 (2006.01); G01R 31/3193 (2006.01);
U.S. Cl.
CPC ...
G01R 31/3008 (2013.01); G01R 31/31935 (2013.01);
Abstract

This document describes techniques and systems for leakage screening based on power prediction. In particular, the described systems and techniques estimate, during a silicon manufacturing process, use-case power (e.g., low power, ambient power, high power, gaming power) to apply leakage screening for apart (e.g., a chip package). In some aspects, measurable silicon parameters (e.g., leakage values, bin values, processor sensor values) may be used for use-case power prediction. Using the described techniques, a maximum allowable predicted use-case power can be determined and used for leakage screening regardless of an individual rail leakage or voltage bin assignment.


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