The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Jun. 28, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Franz Jost, Stuttgart, DE;

Harald Witschnig, Landskron, AT;

Juergen Zimmer, Neubiberg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01D 5/16 (2006.01); G01R 33/09 (2006.01); G01R 33/00 (2006.01); G01D 3/08 (2006.01); H10B 61/00 (2023.01); H10N 59/00 (2023.01); H10N 50/00 (2023.01);
U.S. Cl.
CPC ...
G01D 5/16 (2013.01); G01D 3/08 (2013.01); G01R 33/0052 (2013.01); G01R 33/09 (2013.01); H10B 61/00 (2023.02); H10N 50/00 (2023.02); H10N 59/00 (2023.02);
Abstract

A method for forming a sensor circuit. The method includes forming a plurality of magnetoresistive structures having a first predefined reference magnetization direction in a first common area of a common semiconductor substrate; forming a plurality of magnetoresistive structures having a second predefined reference magnetization direction in a second common area of the common semiconductor substrate; and forming electrically conductive structures electrically coupling the magnetoresistive structures having the first predefined reference magnetization direction to the magnetoresistive structures having the second predefined reference magnetization direction to form a plurality of half-bridge sensor circuits, wherein each half-bridge sensor circuit comprises a magnetoresistive structure having the first predefined reference magnetization direction electrically coupled to a second magnetoresistive structure having the second predefined reference magnetization direction.


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