The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Sep. 21, 2018
Applicant:

Tokuyama Corporation, Shunan, JP;

Inventors:

Masayuki Fukuda, Shunan, JP;

Toru Nagashima, Shunan, JP;

Assignee:

TOKUYAMA CORPORATION, Shunan, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); C23C 16/0209 (2013.01); C23C 16/34 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02634 (2013.01); H01L 21/02658 (2013.01); H01L 33/0075 (2013.01);
Abstract

A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (ν−ν)/νis within the range of ±0.1%, wherein νis a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and νis an average value of peak wave numbers of micro-Raman spectra in the outer region.


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