The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Aug. 04, 2022
Applicant:

Pulse Biosciences, Inc., Hayward, CA (US);

Inventors:

Chaofeng Huang, San Jose, CA (US);

Gregory P. Schaadt, Santa Clara, CA (US);

Kenneth R. Krieg, Fremont, CA (US);

Assignee:

Pulse Biosciences, Inc., Hayward, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 27/28 (2006.01); A61N 1/36 (2006.01); A61N 1/04 (2006.01); H01F 27/24 (2006.01); H03K 3/353 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
A61N 1/36034 (2017.08); A61N 1/0472 (2013.01); H01F 27/24 (2013.01); H01F 27/2823 (2013.01); H03K 3/353 (2013.01); H05K 1/181 (2013.01); H01F 2027/2833 (2013.01); H05K 2201/1003 (2013.01); H05K 2201/10166 (2013.01); H05K 2201/10545 (2013.01);
Abstract

Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.


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