The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Dec. 21, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yoon-Jong Cho, Seongnam-si, KR;

Seok Je Seong, Seongnam-si, KR;

Seong Jun Lee, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/126 (2023.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); G09G 3/3208 (2016.01); H10K 50/86 (2023.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/126 (2023.02); G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); G09G 3/3208 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01); G09G 2310/0254 (2013.01); G09G 2320/0238 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 29/04 (2013.01); H01L 29/7869 (2013.01); H01L 29/78672 (2013.01); H01L 29/78675 (2013.01); H10K 50/865 (2023.02); H10K 59/12 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02);
Abstract

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.


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