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H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01);

Abstract

A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.

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