The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Feb. 23, 2021
Fujifilm Corporation, Tokyo, JP;
Eijiro Iwase, Minami-ashigara, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.