The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Mar. 03, 2021
Kioxia Corporation, Tokyo, JP;
Ryota Narasaki, Yokkaichi Mie, JP;
Weili Cai, Yokkaichi Mie, JP;
Satoshi Nagashima, Yokkaichi Mie, JP;
Takayuki Ishikawa, Yokkaichi Mie, JP;
Yusuke Shimada, Yokkaichi Mie, JP;
Yefei Han, Yokkaichi Mie, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.