The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Apr. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yanghee Lee, Incheon, KR;
Seokhan Park, Seongnam-si, KR;
Sungchang Park, Hwaseong-si, KR;
Boun Yoon, Seoul, KR;
Ilyoung Yoon, Hwaseong-si, KR;
Youngsuk Lee, Hwaseong-si, KR;
Junseop Lee, Hwaseong-si, KR;
Seungho Han, Seoul, KR;
Jaeyong Han, Seongnam-si, KR;
Jeehwan Heo, Busan, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes: forming a lower structure that includes a substrate and conductive lines on the substrate, within a chip region and an edge region of the lower structure; forming data storage structures on the chip region of the lower structure; forming dummy structures on the edge region of the lower structure; forming an interlayer insulating layer covering the data storage structures and the dummy structures on the lower structure, the interlayer insulating layer including high step portions and low step portions, an upper end of the low step portions being lower than an upper end of the high step portions; and planarizing the interlayer insulating layer.