The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jul. 28, 2021
Applicant:

Chengdu Sino Microelectronics Technology Co., Ltd., Chengdu, CN;

Inventors:

Feixiang Xiang, Chengdu, CN;

Yuanjun Cen, Chengdu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03M 1/06 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0211 (2013.01); H03M 1/0612 (2013.01);
Abstract

A high-speed high-linearity time-interleaved dynamic operational amplifier circuit includes a first current channel and a second current channel. The first current channel includes a first MOS transistor, a second MOS transistor and a third MOS transistor which are sequentially connected in series between a high level and a ground level. The first MOS transistor and the second MOS transistor have opposite conductivity types. A control end of the first MOS transistor is connected to a control end of the second MOS transistor. The second current channel includes a fourth MOS transistor, a fifth MOS transistor and a sixth MOS transistor which are sequentially connected in series between the high level and the ground level. The fourth MOS transistor and the fifth MOS transistor have opposite conductivity types. A control end of the fourth MOS transistor is connected to a control end of the fifth MOS transistor.


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