The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Oct. 14, 2021
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Qd Laser, Inc., Kawasaki, JP;
Yuki Kamata, Nisshin, JP;
Hiroyuki Tarumi, Nisshin, JP;
Koichi Oyama, Nisshin, JP;
Keizo Takemasa, Kawasaki, JP;
Kenichi Nishi, Kawasaki, JP;
Yutaka Onishi, Kawasaki, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
QD LASER, Inc., Kawasaki, JP;
Abstract
The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.