The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Sep. 29, 2020
Applicant:

Bolb Inc., San Jose, CA (US);

Inventors:

Jianping Zhang, San Jose, CA (US);

Ling Zhou, San Jose, CA (US);

Ying Gao, San Jose, CA (US);

Assignee:

BOLB INC., Livermore, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 31/0224 (2006.01); H01L 31/101 (2006.01); H01L 33/14 (2010.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 31/022408 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01); H01L 31/03048 (2013.01); H01L 31/1016 (2013.01); H01L 33/14 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.


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