The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Feb. 10, 2021
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu, JP;

Inventor:

Koichi Goshonoo, Kiyosu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/54 (2010.01); H01L 33/42 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 27/156 (2013.01); H01L 33/42 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting device includes plural light emitting elements arranged on a substrate in lines and individually emit light each other. The light emitting device includes a single continuous n-type semiconductor layer on the substrate shared by the plural light emitting elements, a single continuous light emitting layer on the n-type semiconductor layer shared by the plural light emitting elements, a single continuous p-type semiconductor layer on the light emitting layer shared by the plural light emitting elements, a single continuous contact electrode film on the p-type semiconductor layer shared by the plural light emitting elements, and plural p-side bonding electrodes on the contact electrode film respectively used for the plural light emitting elements. The contact electrode film and the p-type semiconductor layer are configured so as to control current diffusion in in-plane directions thereof.


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