The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Oct. 21, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Nakjin Son, Suwon-si, KR;
Seungjoon Lee, Incheon, KR;
Bong Seob Yang, Suwon-si, KR;
Doyoung Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device include a substrate including a peripheral region, a first active pattern provided on the peripheral region of the substrate, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns which are alternately stacked, a first gate electrode intersecting the first active pattern, a pair of first source/drain patterns provided at both sides of the first gate electrode, respectively, and a first gate insulating layer disposed between the first gate electrode and the first active pattern. The first gate insulating layer includes a first insulating layer formed on the first active pattern, a second insulating layer formed on the first insulating layer, and a high-k dielectric layer formed on the second insulating layer. The first gate insulating layer contains a first dipole element including lanthanum (La), aluminum (Al), or a combination thereof.