The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Jul. 02, 2019
Applicant:
Trustees of Dartmouth College, Hanover, NH (US);
Inventors:
Assignee:
TRUSTEES OF DARTMOUTH COLLEGE, Hanover, NH (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01); H04N 25/778 (2023.01); H04N 25/59 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14679 (2013.01); H01L 27/1461 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14689 (2013.01); H04N 25/778 (2023.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01); H04N 25/59 (2023.01); H04N 25/77 (2023.01);
Abstract
Some embodiments provide an image sensor pixel comprising a junction field effect transistor (JFET) and a floating diffusion configured to act as the gate of the JFET. An image sensor may comprise a plurality of pixels, at least one pixel comprising floating diffusion region formed in a semiconductor substrate, a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion, and a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region.