The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11764145 B1

Date of Patent:

Sep. 19, 2023

Filed:

Apr. 06, 2021

Wiring structure having double capping structure, manufacturing method thereof, and integrated circuit chip having the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaejin Lee, Goyang-si, KR;

Hana Kim, Hwaseong-si, KR;

Jaewha Park, Yongin-si, KR;

Dongchan Lim, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Lee IP Law, P.C.

Primary Examiner:

Chuong A Luu

Int. Cl.

CPC ...

H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);

U.S. Cl.

CPC ...

H01L 23/5226 (2013.01); H01L 21/76841 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/53238 (2013.01);

Abstract

A wiring structure includes a filling metal, a cover metal including cobalt (Co) on the filling metal, the cover metal having a first portion along a side surface and along a lower surface of the filling metal, and a second portion along an upper surface of the filling metal, a barrier metal on an outer surface of the first portion of the cover metal, and a capping metal on an outer surface of the second portion of the cover metal, the capping metal including a cobalt (Co) alloy, wherein the filling metal has higher conductivity than the cover metal and the barrier metal.

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