The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Sep. 08, 2020
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Johji Nishio, Machida, JP;

Tatsuo Shimizu, Shinagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02634 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02502 (2013.01); H01L 21/02529 (2013.01); H01L 21/0475 (2013.01); H01L 22/20 (2013.01); H01L 29/0684 (2013.01); H01L 29/1608 (2013.01); H01L 29/167 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a substrate is disclosed. The method can include preparing a structure body. The structure body includes a first semiconductor member and a second semiconductor member. The first semiconductor member includes silicon carbide including a first element. The second semiconductor member includes silicon carbide including a second element. The first element includes at least one selected from a first group consisting of N, P, and As. The second element includes at least one selected from a second group consisting of B, Al, and Ga. The method can include forming a hole that extends through the second semiconductor member and reaches the first semiconductor member. In addition, the method can include forming a third semiconductor member in the hole. The third semiconductor member includes silicon carbide including a third element. The third element includes at least one selected from the first group.


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