The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Oct. 12, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sehwan Park, Yongin-si, KR;
Jinyoung Kim, Seoul, KR;
Youngdeok Seo, Seoul, KR;
Dongmin Shin, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 7/10 (2006.01); G11C 11/54 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 7/1057 (2013.01); G11C 7/1084 (2013.01); G11C 11/54 (2013.01); G11C 16/0433 (2013.01); G11C 16/102 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3445 (2013.01); G11C 16/3495 (2013.01);
Abstract
A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.