The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Oct. 23, 2020
Western Digital Technologies, Inc., San Jose, CA (US);
Takuya Futase, Nagoya, JP;
Takashi Kobayashi, Yokkaichi, JP;
Abstract
This disclosure relates to a low-resistance a multi-layer electrode and method of making a multi-layer electrode. Silicon is deposited on a substrate to form a top silicon layer. Nickel is deposited onto the top silicon layer to form a nickel layer. The substrate is annealed for a first time period and at a first temperature to form a di-nickel silicide layer with a remainder silicon layer between the di-nickel silicide layer and the substrate. Unreacted nickel of the nickel layer is removed to expose the di-nickel silicide layer. The substrate is annealed for a second time period and at a second temperature to form a nickel monosilicide layer from the di-nickel silicide layer and the remainder silicon layer such that the nickel monosilicide layer forms between a remainder di-nickel silicide layer and the substrate. The remainder di-nickel silicide layer and nickel monosilicide layer form a multi-layer electrode.