The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Aug. 15, 2019
Xi'an Jiaotong University, Shaanxi, CN;
Penn State Research Foundation, University Park, PA (US);
Fei Li, Shaanxi, CN;
Chaorui Qiu, Shaanxi, CN;
Zhuo Xu, Shaanxi, CN;
Bo Wang, University Park, PA (US);
Long-Qing Chen, University Park, PA (US);
Shujun Zhang, University Park, PA (US);
Thomas R. Shrout, University Park, PA (US);
XI'AN JIAOTONG UNIVERSITY, Shaanxi, CN;
THE PENNSYLVANIA STATE UNIVERSITY, University Park, PA (US);
Abstract
A method of preparing a piezoelectric single crystal with high piezoelectricity and near- perfect transparency. The method includes depositing electrodes on two opposition surfaces of a piezoelectric single crystal which is a ferroelectric crystal; AC-poling the piezoelectric single crystal through the electrodes by repeatedly changing polarity of an AC electric field; and after polarization, removing the electrodes on the two opposition surfaces of the piezoelectric single crystal and then depositing Ag nanowire or indium tin oxide (ITO) as electrodes on the two opposition surfaces of the piezoelectric single crystal. Repeatedly changing the polarity of the polarized electric field can increase the domain size of the ferroelectric crystal, or reduce the domain wall density of the domain structure, thereby improving the transparency of the piezoelectric single crystal having high piezoelectric.