The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jun. 19, 2019
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Gwenael Le Rhun, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/072 (2023.01); H10N 30/073 (2023.01); H10N 30/079 (2023.01); H10N 30/87 (2023.01); H10N 30/00 (2023.01); H10N 30/071 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/072 (2023.02); H10N 30/071 (2023.02); H10N 30/073 (2023.02); H10N 30/079 (2023.02); H10N 30/10513 (2023.02); H10N 30/877 (2023.02); H10N 30/8554 (2023.02);
Abstract
A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.