The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Mar. 26, 2019
Sumitomo Electric Industries, Ltd., Osaka, JP;
Toyota School Foundation, Nagoya, JP;
Kotaro Hirose, Osaka, JP;
Masahiro Adachi, Osaka, JP;
Takashi Matsuura, Saka, JP;
Yoshiyuki Yamamoto, Osaka, JP;
Tsunehiro Takeuchi, Nagoya, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
TOYOTA SCHOOL FOUNDATION, Nagoya, JP;
Abstract
A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.