The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jan. 07, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hisashi Yoshida, Kawasaki, JP;

Shigeya Kimura, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/15 (2006.01); H10N 10/80 (2023.01); H02M 7/00 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H10N 10/80 (2023.02); H02M 1/15 (2013.01); H02M 7/003 (2013.01); H02M 1/007 (2021.05);
Abstract

A power generation element includes a first crystal region including AlGaN (0<x1≤1), and a second crystal region including a first element and AlGaN (0≤x2<x1). The first element includes at least one selected from the group consisting of Si, Ge, Te, and Sn. The first crystal region includes a first surface and a second surface. The second surface is between the second crystal region and the first surface. The second crystal region includes a third surface and a fourth surface. The third surface is between the fourth surface and the first crystal region. An orientation from the fourth surface toward the third surface is along a <0001> direction of the second crystal region. An orientation from the second surface toward the first surface is along a <000-1> direction of the first crystal region.


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