The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Aug. 26, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Shu Jing, Beijing, CN;

Xiaobo Du, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H10K 50/13 (2023.01); H10K 50/19 (2023.01); H10K 71/00 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/131 (2023.02); H10K 50/19 (2023.02); H10K 71/00 (2023.02); H10K 85/60 (2023.02); H10K 85/626 (2023.02); H10K 85/631 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02); H10K 2101/30 (2023.02); H10K 2102/351 (2023.02); H10K 2102/361 (2023.02);
Abstract

The present disclosure provides a light emitting device including: a first electrode; a first light emitting layer on a side of the first electrode; an N-type charge generation layer on a side of the first light emitting layer distal to the first electrode; a P-type charge generation layer on a side of the N-type charge generation layer distal to the first light emitting layer; a second light emitting layer on a side of the P-type charge generation layer distal to the N-type charge generation layer; and a second electrode on a side of the second light emitting layer distal to the P-type charge generation layer. The N-type charge generation layer includes a host material which has a lowest unoccupied molecular orbital energy level less than or equal to −2.9 and a glass transition temperature greater than 130° C.


Find Patent Forward Citations

Loading…