The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Sep. 28, 2021
Applicant:
Board of Trustees of the University of Arkansas, Little Rock, AR (US);
Inventors:
Assignee:
BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS, Little Rock, AR (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/322 (2013.01); H01S 5/021 (2013.01); H01S 5/3223 (2013.01); H01S 5/3427 (2013.01); H01S 5/04256 (2019.08); H01S 5/3054 (2013.01); H01S 5/3077 (2013.01); H01S 5/32 (2013.01); H01S 5/3407 (2013.01); H01S 5/3426 (2013.01);
Abstract
A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.