The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Oct. 27, 2020
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Inventors:

Yunlong Li, Heverlee, BE;

Epimitheas Georgitzikis, Saint-Gilles, BE;

David Cheyns, Heffen, BE;

Assignees:

IMEC vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0392 (2013.01); H01L 27/14634 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01);
Abstract

An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.


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