The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

May. 19, 2021
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventor:

Didier Dutartre, Meylan, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); G01S 7/4865 (2020.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/028 (2013.01); G01S 7/4865 (2013.01); H01L 27/14649 (2013.01); H01L 31/1037 (2013.01);
Abstract

An integrated optical sensor is formed by a pinned photodiode. A semiconductor substrate includes a first semiconductor region having a first type of conductivity located between a second semiconductor region having a second type of conductivity opposite to the first type one and a third semiconductor region having the second type of conductivity. The third semiconductor region is thicker, less doped and located deeper in the substrate than the second semiconductor region. The third semiconductor region includes both silicon and germanium. In one implementation, the germanium within the third semiconductor region has at least one concentration gradient. In another implementation, the germanium concentration within the third semiconductor region is substantially constant.


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