The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Mar. 09, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seunghoon Choi, Yongin-si, KR;
Ilyoung Yoon, Hwaseong-si, KR;
Ilsu Park, Seoul, KR;
Kiho Bae, Seoul, KR;
Boun Yoon, Seoul, KR;
Yooyong Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including a substrate; a gate structure on the substrate; a gate spacer on a sidewall of the gate structure; and a polishing stop pattern on the gate structure and the gate spacer, the polishing stop pattern including a first portion covering an upper surface of the gate structure and an upper surface of the gate spacer; and a second portion extending from the first portion in a vertical direction substantially perpendicular to an upper surface of the substrate, wherein an upper surface of a central portion of the first portion of the polishing stop pattern is higher than an upper surface of an edge portion of the first portion thereof, and the upper surface of the central portion of the first portion of the polishing stop pattern is substantially coplanar with an upper surface of the second portion thereof.