The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Aug. 29, 2022
Key Foundry Co., Ltd., Cheongju-si, KR;
Yon Sup Pang, Cheonan-si, KR;
KEY FOUNDRY CO., LTD., Cheongju-si, KR;
Abstract
A semiconductor device includes a semiconductor substrate comprising a P-type lightly doped semiconductor layer; an undoped silicon layer formed on the P-type lightly doped semiconductor layer; a first deep trench isolation and a second deep trench isolation formed from an upper surface of the semiconductor substrate to the undoped silicon layer and filled with insulating films; and a first N-type highly doped buried layer formed on the undoped silicon layer, and disposed between the first deep trench isolation and the second deep trench isolation, wherein the undoped silicon layer surrounds bottoms of the first and second deep trench isolations, and has a thickness greater than a thickness of the first N-type highly doped buried layer.