The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Mar. 18, 2021
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Hiroshi Shibata, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/30655 (2013.01); H01L 28/84 (2013.01); H01L 29/66181 (2013.01); H01L 29/945 (2013.01); H01L 28/75 (2013.01);
Abstract

A semiconductor device has: a semiconductor substrate; a trench that extends from a first surface of the semiconductor substrate towards an interior of the semiconductor substrate, and that has a recess/protrusion structure on a side wall surface thereof; a semiconductor film that is formed so as to cover the side wall surface of the trench, be continuous with the side wall surface, and extend onto the first surface of the semiconductor substrate; an opposite electrode having a first portion that is provided at a position opposing the semiconductor substrate while sandwiching the semiconductor film therebetween, and that extends on the first surface of the semiconductor substrate, and a second portion that is continuous with the first portion and extends so as to fill the trench; and an insulating film that insulates the semiconductor film from the opposite electrode.


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