The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Dec. 10, 2021
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Rajeev J. Ram, Arlington, MA (US);
Jaehwan Kim, Cambridge, MA (US);
Jin Xue, Cambridge, MA (US);
Zheng Li, Shenzhen, CN;
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01);
Abstract
Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm, exceeding the performance of even high brightness gallium nitride LEDs.