The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Apr. 30, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sungwe Cho, Hwaseongi-si, KR;
Subin Jin, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G06F 30/392 (2020.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/392 (2020.01); H01L 23/5286 (2013.01); H01L 27/0924 (2013.01);
Abstract
An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.