The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Aug. 06, 2021
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Takashi Iwamoto, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 23/295 (2013.01); H01L 23/315 (2013.01); H01L 23/367 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49844 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/24 (2013.01); H01L 25/165 (2013.01); H01L 2223/6616 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/24137 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/14215 (2013.01);
Abstract

A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.


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