The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Oct. 01, 2019
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Hideki Ueda, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01Q 5/378 (2015.01); H01Q 1/48 (2006.01); H01Q 1/52 (2006.01); H01Q 13/08 (2006.01); H01Q 13/10 (2006.01); H01Q 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01Q 1/48 (2013.01); H01Q 1/526 (2013.01); H01Q 5/378 (2015.01); H01Q 13/08 (2013.01); H01Q 13/10 (2013.01); H01Q 23/00 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A ground plane is disposed in a dielectric substrate or on the top surface of the dielectric substrate. A high-frequency semiconductor device is mounted on the bottom surface of the dielectric substrate. A shield structure that is provided in a space closer to the bottom surface than the ground plane is surrounds the high-frequency semiconductor device from below and sideways of the high-frequency semiconductor device and is connected to the ground plane. An opening is formed in the shield structure. A radiation-structure portion causes a high-frequency signal output by the high-frequency semiconductor device to be radiated through the opening.


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