The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jul. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yujin Kwon, Suwon-si, KR;

Seokcheon Baek, Hwaseong-si, KR;

Younghwan Son, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/528 (2013.01); H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 2224/08146 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.


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