The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Nov. 23, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Kuo-Hui Su, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01);
Abstract

The present application discloses a method for fabricating a semiconductor device with metal spacers. The method includes providing a substrate; forming a plurality of plugs above the substrate; forming a plurality of metal spacers above the plurality of plugs; and, forming a plurality of air gaps positioned between the plurality of plugs; wherein the step of forming wherein the plurality of metal spacers comprises forming a first set of metal spacers, forming a second set of metal spacers, forming a third set of metal spacers, and forming a fourth set of metal spacers; wherein the second set of metal spacers is formed between the first set of metal spacers and the third set of metal spacers, and the third set of metal spacers is formed between the second set of metal spacers and the fourth set of metal spacers.


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