The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Sep. 10, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shingo Sato, Kanazawa Ishikawa, JP;
Yuhki Fujino, Kanazawa Ishikawa, JP;
Hiroaki Yamashita, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, first, fourth, and sixth semiconductor regions of a first conductivity type, a junction region, a fifth semiconductor region of a second conductivity type, and a gate electrode. The junction region includes a second semiconductor region of the first conductivity type and a third second semiconductor region of the second conductivity type. The second semiconductor regions and the third semiconductor regions are alternately provided in a second direction perpendicular to a first direction. A concentration of at least one first element selected from the group consisting of a heavy metal element and a proton in the junction region is greater a concentration of the first element in the fourth semiconductor region, or a density of traps in the junction region is greater than that in the first semiconductor region and greater than that in the fourth semiconductor region.