The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Dec. 13, 2021
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Sriseshan Srikanth, Austin, TX (US);

Vignesh Adhinarayanan, Austin, TX (US);

Jagadish B. Kotra, Austin, TX (US);

Sergey Blagodurov, Bellevue, WA (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4093 (2006.01); G11C 11/4096 (2006.01); H03K 19/17728 (2020.01); G11C 8/18 (2006.01); H03K 19/173 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G11C 8/18 (2013.01); G11C 11/4087 (2013.01); G11C 11/4096 (2013.01); H03K 19/1737 (2013.01); H03K 19/17728 (2013.01);
Abstract

A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.


Find Patent Forward Citations

Loading…