The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jul. 30, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventor:

Minseok Oh, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/369 (2011.01); H01L 27/146 (2006.01); G01S 17/894 (2020.01); G01S 17/36 (2006.01); H04N 25/59 (2023.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
G01S 17/894 (2020.01); G01S 17/36 (2013.01); H04N 25/59 (2023.01); H04N 25/75 (2023.01);
Abstract

Examples are disclosed that relate to time of flight imaging using long-exposure and short-exposure storage nodes for each pixel tap of a pixel in an image sensor. One example provides a time-of-flight camera, comprising an image sensor comprising a plurality of pixels, each pixel of the plurality of pixels comprising one or more taps, each tap comprising a photogate, a short-exposure storage node configured to receive charge during a short-exposure interval of an integration period, a long-exposure storage node configured to receive charge during a long-exposure interval of the integration period, a short-exposure switch gate configured to direct charge generated during the short-exposure interval to the short-exposure storage node, a long-exposure switch gate configured to direct charge generated during the long-exposure period to the long-exposure storage node, and a readout mechanism comprising one or more floating diffusion capacitors.


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