The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Aug. 06, 2019
Applicant:

GM Global Technology Operations Llc, Detroit, MI (US);

Inventors:

Yue Fan, Troy, MI (US);

Shifang Li, Shelby Township, MI (US);

Russell K. Steele, Clinton Township, MI (US);

James E. Tarchinski, Rochester Hills, MI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/36 (2020.01); G01R 31/385 (2019.01); G01R 31/364 (2019.01);
U.S. Cl.
CPC ...
G01R 31/3648 (2013.01); G01R 31/364 (2019.01); G01R 31/385 (2019.01);
Abstract

An active isolation detection method may be used with an electrical system having a battery pack connected to a high-voltage bus. The bus has positive and negative bus rails, each having a respective rail-to-ground voltage. The method may include connecting variable resistance element to the high-voltage bus, and determining input information indicative electrical characteristics of the battery pack, the high-voltage bus, and/or a charging station. The method includes varying a bias resistance of the high-voltage bus, via control of the variable resistance element, e.g., via duty cycle control of a binary switch in series with a bias resistor, to produce a varied bias resistance based on the input information. A target voltage shift is achieved on the high-voltage bus as a target level of change in one of the rail-to-ground voltages. An isolation resistance of the electrical system is determined via the controller using the varied bias resistance.


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