The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Feb. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Suyoung Lee, Seongnam-si, KR;

Jongmin Kim, Seoul, KR;

Ilsuk Park, Hwaseong-si, KR;

Kwangil Shin, Suwon-si, KR;

Chungsam Jun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2022.01); G01N 23/225 (2018.01); G01N 23/221 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
G01N 23/225 (2013.01); G01N 23/221 (2013.01); G06T 7/001 (2013.01); G01N 2223/401 (2013.01); G01N 2223/6116 (2013.01); G01N 2223/6462 (2013.01); G06T 2207/30148 (2013.01);
Abstract

An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.


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