Durable electrochromic device including tungsten oxide film prepared in high ion bombardment and low pressure deposition environment, and/or methods of making the same

Abstract

Certain example embodiments of this invention relate to electrochromic devices (), assemblies incorporating electrochromic devices, and methods of making the same. Highly-durable electrochromic devices include tungsten oxide (e.g., WOor other suitable stoichiometry) films () prepared using high-rate bias-enhanced sputter deposition. The sputtering is performed in a low-pressure (e.g., 1 mTorr) environment, and the biasing is very high (e.g., greater than −400 V, more preferably greater than −500 V), which causes high energy ion bombardment that in turn leads to partial nanocrystallization of the WOmatrix, while simultaneously generating the porous microstructure desirable for ionic diffusion.