The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Aug. 18, 2021
Applicant:

Google Llc, Mountain View, CA (US);

Inventor:

Anthony Edward Megrant, Goleta, CA (US);

Assignee:

Google LLC, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/83 (2023.01); G06N 10/00 (2022.01); H10N 60/01 (2023.01); H10N 69/00 (2023.01); H01L 21/768 (2006.01); H10N 60/10 (2023.01); H10N 60/85 (2023.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H10N 60/83 (2023.02); G06N 10/00 (2019.01); H10N 60/01 (2023.02); H10N 69/00 (2023.02); H01L 21/2855 (2013.01); H01L 21/76891 (2013.01); H10N 60/0156 (2023.02); H10N 60/0912 (2023.02); H10N 60/10 (2023.02); H10N 60/855 (2023.02);
Abstract

A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.


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