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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11751439 B1

PDFFull Text
Date of Patent:
Sep. 05, 2023

Filed:

Apr. 02, 2021

Display device and manufacturing method thereof including contact holes optimized to prevent excess hydrogen from introducing into semiconductor layer

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyung Jun Kim, Seoul, KR;

So Young Koo, Yongin-si, KR;

Eok Su Kim, Seoul, KR;

Yun Yong Nam, Hwaseong-si, KR;

Jun Hyung Lim, Seoul, KR;

Kyung Jin Jeon, Incheon, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:

CANTOR COLBURN LLP

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/121 (2023.01); H10K 71/00 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H10K 59/1201 (2023.02);
Abstract

A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μmto about 81 μm.

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